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H7N0307AB データシート - Renesas Electronics

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部品番号
H7N0307AB

コンポーネント説明
Silicon N Channel MOS FET High Speed Power Switching

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7 Pages

File Size
77.6 kB

メーカー
Renesas
Renesas Electronics Renesas

Silicon N Channel MOS FET High Speed Power Switching


FEATUREs
•  Low on-resistance
    RDS (on)= 4.6 mΩ typ.
•  Low drive current
•  4.5 V gate drive device can be driven from 5 V source

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部品番号
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