DESCRIPTION
The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.
The H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FEATURES
■ Compact 4-pin package
■ Current transfer ratio in selected groups:
H11AA814: 20-300% H11A817: 50-600%
H11AA814A: 50-150% H11A817A: 80-160%
H11A817B: 130-260%
H11A817C: 200-400%
H11A817D: 300-600%
APPLICATIONS
H11AA814 Series
■ AC line monitor
■ Unknown polarity DC sensor
■ Telephone line interface
H11A817 Series
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
■ Industrial controls