Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
FEATUREs
■ Low CRES/ CIES ratio (no cross conduction susceptibility)
■ IGBT co-packaged with ultra fast free-wheeling diode
APPLICATIONs
■ High frequency inverters, UPS
■ Motor drivers
■ HF, SMPS and PFC in both hard switch and resonant topologies
■ Welding
■ Induction heating