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GP2401ESM18 データシート - Dynex Semiconductor

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GP2401ESM18

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The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.
The GP2401ESM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability.


FEATURES
■ Low VCE(SAT)
■ High Thermal Cycling Capability
■ Non Punch Through Silicon
■ Isolated MMC Base with AlN Substrates


APPLICATIONS
■ High Reliability Inverters
■ Motor Controllers
■ Traction Drives
■ Low-Loss System Retrofits

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