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GM17C18163CJ-6 データシート - Hynix Semiconductor

GM17C18163CJ-5 image

部品番号
GM17C18163CJ-6

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Hynix
Hynix Semiconductor Hynix

Description
The GM71C(S)18163C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71C(S)18163C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C(S)18163C/CL offers Extended Data out(EDO) Mode as a high speed access mode. Multiplexed address inputs permit the GM71C(S)18163C/CL to be packaged in standard 400 mil 42pin plastic SOJ, and standard 400mil 44(50)pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.


FEATUREs
* 1,048,576 Words x 16 Bit Organization
* Extended Data Out Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time

* Low Power
   Active : 1045/935/825mW (MAX)
   Standby : 11mW (CMOS level : MAX)
                0.83mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 1024 Refresh Cycles/16ms
* 1024 Refresh Cycles/128ms (L-version)
* Self Refresh Operation (L-version)
* Battery Back Up Operation (L-version)
* 2 CAS byte Control

 

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部品番号
コンポーネント説明
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メーカー
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
Hynix Semiconductor
1,048,576 x 16 - Bit CMOS Dynamic RAM ( Rev : V2 )
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1,048,576 x 16 - Bit CMOS Dynamic RAM
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1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM
Vanguard International Semiconductor
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM
Hynix Semiconductor
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
Hynix Semiconductor
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
Hynix Semiconductor
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
Hynix Semiconductor
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM
Hynix Semiconductor
1,048,576 Words x 16 Bit DRAM, 60ns
LG

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