datasheetbank_Logo
データシート検索エンジンとフリーデータシート
HOME  >>>  GeneSiC Semiconductor, Inc.  >>> GC02MPS12-214 PDF

GC02MPS12-214(2018) データシート - GeneSiC Semiconductor, Inc.

GC02MPS12-214 image

部品番号
GC02MPS12-214

コンポーネント説明

Other PDF
  lastest PDF  

PDF
DOWNLOAD     

page
7 Pages

File Size
1.5 MB

メーカー
GENESIC
GeneSiC Semiconductor, Inc. GENESIC

Features
• High Avalanche (UIS) Capability
• Enhanced Surge Current Capability
• 175 °C Maximum Operating Temperature
• Temperature Independent Switching Behavior
• Positive Temperature Coefficient Of VF
• Extremely Fast Switching Speeds
• Superior Figure of Merit QC/IF

Advantages
• Low Standby Power Losses
• Improved Circuit Efficiency (Lower Overall Cost)
• Low Switching Losses
• Ease of Paralleling Devices without Thermal Runaway
• Smaller Heat Sink Requirements
• Low Reverse Recovery Current
• Low Device Capacitance
• Low Reverse Leakage Current at Operating Temperature


APPLICATIONs
• Power Factor Correction (PFC)
• Switched-Mode Power Supply (SMPS)
• Solar Inverters
• Wind Turbine Inverters
• Motor Drives
• Induction Heating
• Uninterruptible Power Supply (UPS)
• High Voltage Multipliers


部品番号
コンポーネント説明
PDF
メーカー
Silicon Carbide Power Schottky Diode
ComChip
Silicon Carbide Power Schottky Diode
ComChip
Silicon Carbide Power Schottky Diode
ComChip
Silicon Carbide Power Schottky Diode
ComChip
Silicon Carbide Power Schottky Diode
ComChip
Silicon Carbide Power Schottky Diode ( Rev : 2018 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode ( Rev : 2014 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode ( Rev : 2018 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode ( Rev : 2014 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode ( Rev : 2014 )
GeneSiC Semiconductor, Inc.

Share Link: GO URL

EnglishEnglish Korean한국어 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]