Features
• 210°C maximum operating temperature
• Gate Oxide Free SiC switch
• Exceptional Safe Operating Area
• Excellent Gain Linearity
• Temperature Independent Switching Performance
• Low Output Capacitance
• Positive Temperature Co-efficient of RDS,ON
• Suitable for connecting an anti-parallel diode

Advantages
• Compatible with Si MOSFET/IGBT gate-drivers
• > 20 µs Short-Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal Distortion
• High Amplifier Bandwidth

APPLICATIONs
• Down Hole Oil Drilling, Geothermal Instrumentation
• Hybrid Electric Vehicles (HEV)
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)
• Induction Heating
• Uninterruptible Power Supply (UPS)
• Motor Drives