Features
• Composite type composed of a ow ON-resistance N-channel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward-voltage Schottky barrier diode. Facilitates high-density mounting.
• The FX855 is formed with 2 chips, one being equivalent to the 2SK1470 and the other the SB05- 09, placed in one package.