General Description
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

FEATUREs
● Fast switching
● Green Device Available
● Suit for 4.5V Gate Drive Applications

APPLICATIONs
● DC Fan
● Motor Drive Applications
● Networking
● Half / Full Bridge Topology