Description
The FM25L512 is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

FEATUREs
512K bit Ferroelectric Nonvolatile RAM
• Organized as 65,536 x 8 bits
• Unlimited Read/Write Cycles
• 10 Year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI
• Up to 20 MHz Frequency
• Direct Hardware Replacement for EEPROM
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme
• Hardware Protection
• Software Protection

Low Power Consumption
• Low Voltage Operation 3.0V – 3.6V
• 20 µA Standby Current

Industry Standard Configurations
• Industrial Temperature -40°C to +85°C
• 8-pin “Green”/RoHS TDFN Package
• Footprint Compatible with SOIC-8 (see pg 12)