Functional Description
The FM24V02A is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories.
FEATUREs
■ 256-Kbit ferroelectric random access memory (F-RAM)
logically organized as 32K × 8
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Fast two-wire serial interface (I2C)
❐ Up to 3.4-MHz frequency[1]
❐ Direct hardware replacement for serial EEPROM
❐ Supports legacy timings for 100 kHz and 400 kHz
■ Device ID
❐ Manufacturer ID and Product ID
■ Low power consumption
❐ 175-μA active current at 100 kHz
❐ 150-μA standby current
❐ 8-μA sleep mode current
■ Low-voltage operation: VDD = 2.0 V to 3.6 V
■ Industrial temperature: –40 °C to +85 °C
■ 8-pin small outline integrated circuit (SOIC) package
■ Restriction of hazardous substances (RoHS) compliant