Description
The  FM24C64B  is  a  64-kilobit  nonvolatile  memory employing  an  advanced  ferroelectric  process.  A
ferroelectric  random  access  memory  or  FRAM  is nonvolatile  and  performs  reads  and  writes  like  a RAM. It provides reliable data retention for  38  years while  eliminating  the  complexities,  overhead,  and system  level  reliability  problems  caused  by EEPROM and other nonvolatile memories.

FEATUREs
64K bit Ferroelectric Nonvolatile RAM
Organized as 8,192 x 8 bits
High Endurance 1 Trillion (10¹²) Read/Writes
38 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface
Up to 1 MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz

Low Power Operation
5V operation
100 µA Active Current (100 kHz)
4 µA (typ.) Standby Current

Industry Standard Configuration
Industrial Temperature -40  C to +85  C
8-pin “Green”/RoHS SOIC (-G)