メーカー
Shenzhen Foster Semiconductor Co., Ltd.
DESCRIPTION
FIR7NS65ALG is an N-channel enhancement mode high voltage power MOSFETs produced using DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density,and superior thermal behavior. Furthermore , it’s universal applicable, for example, it is suitable for hard and soft hard and soft switching topologies, Lighting, Adapters etc.
FEATURES
✦ 7A,650V, RDS(on)(typ.)=0.55Ω@VGS=10V
✦ New revolutionary high voltage technology
✦ Ultra low gate charge
✦ Enhanced avalanche capability
✦ Extreme dv/dt rated
✦ High peak current capability
7A, 650V DP MOS POWER TRANSISTOR-S
Shenzhen Foster Semiconductor Co., Ltd.
7A, 650V DP MOS POWER TRANSISTOR-S
Shenzhen Foster Semiconductor Co., Ltd.
7A, 700V DP MOS POWER TRANSISTOR-S
Shenzhen Foster Semiconductor Co., Ltd.
11A, 650V DP MOS POWER TRANSISTOR-S ( Rev : V2 )
Shenzhen Foster Semiconductor Co., Ltd.
11A, 650V DP MOS POWER TRANSISTOR-S ( Rev : V2 )
Shenzhen Foster Semiconductor Co., Ltd.
650V 7A α MOS TM Power Transistor
Alpha and Omega Semiconductor
650V 7A αMOS TM Power Transistor
Alpha and Omega Semiconductor
650V 7A αMOS ™ Power Transistor
Alpha and Omega Semiconductor
650V 7A αMOS ™ Power Transistor ( Rev : 2012 )
Alpha and Omega Semiconductor
Nch 650V 7A Power MOSFET
ROHM Semiconductor