Description
M/A-COM’s PE3 process utilizes molecular beam epitaxy (MBE) to implement a MESFET active layer structure that achieves high efficiency and breakdown for multi-watt power applications thru 18GHz. The focus is on products for moderate to high volume applications. M/A-COM offers a full compliment of foundry services to meet the requirements for custom designing a MMICbased die or packaged product.

FEATUREs
• 0.5 µm MBE MESFET Technology for High Power Applications
• MMICs up to 18 GHz
• 100 mm wafer diameter
• Layout and design assistance
• Space qualification
• Custom test and packaging