General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

FEATUREs
■ Max rDS(on) = 7.6mΩ, VGS = 10V, ID = 14A
■ Max rDS(on) = 11.4mΩ, VGS = 4.5V, ID = 11.5A
■ High performance trench technology for extremely low rDS(on) and fast switching
■ Very low gate charge
■ High power and current handling capability
■ 100% RG tested
■ RoHS Compliant

APPLICATIONs
■ Notebook CPU power supply
■ Synchronous rectifier