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Fairchild Semiconductor
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General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FEATUREs
• RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• RoHS compliant
APPLICATION
• DC to DC convertors / Synchronous Rectification
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