General Description
   This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode.

FEATUREs
• Shielded Gate MOSFET Technology
• Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
• Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
• ADD
• 50% lower Qrr than other MOSFET suppliers
• Lowers switching noise/EMI
• MSL1 robust package design
• 100% UIL tested
• RoHS Compliant

APPLICATIONs
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
• Solar