General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FEATUREs
■6.3A, 30V.
  RDS(ON)= 25 mΩ@ VGS= 10V
  RDS(ON)= 33 mΩ@ VGS= 4.5V
■Fast switching
■Low gate charge
■High performance trench technology for extremely low Rdson