General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.

FEATUREs
• 6.5 A, 20 V RDS(ON) = 20 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.5 V
• ESD protection diode (note 3)
• High performance trench technology for extremely low RDS(ON)
• FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size

APPLICATIONs
• Battery management/Charger Application
• Load switch