General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

FEATUREs
• 4.3 A, 60 V. RDS(ON) = 0.055 W @ VGS = 10 V RDS(ON) = 0.064 W @ VGS = 6 V
• Low gate charge (12.5nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).