General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FEATUREs
• 1.4 A, 150 V.
   RDS(ON) = 425 mΩ @ VGS = 10 V
   RDS(ON) = 475 mΩ @ VGS = 6 V
• High performance trench technology for extremely
   low RDS(ON)
• Low gate charge (8nC typ)
• High power and current handling capability
• Fast switching speed

APPLICATIONs
• DC/DC converter