N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ

Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

FEATUREs
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 510 mΩ
• Ultra Low Gate Charge (Typ. Qg = 20 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF)
• 100% Avalanche Tested
• ESD Improved Capacity
• RoHS Compliant

APPLICATIONs
• LCD / LED / PDP TV and Monitor Lighting
• Solar Inverter
• AC-DC Power Supply