EPA120B データシート - Excelics Semiconductor, Inc.
部品番号
EPA120B
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Excelics Semiconductor, Inc.
• +29.5dBm TYPICAL OUTPUT POWER
• 9.0dB TYPICAL POWER GAIN FOR EPA120B AND
10.5dB FOR EPA120BV AT 18GHz
• 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• EPA120BV WITH VIA HOLE SOURCE GROUNDING
• Idss SORTED IN 30mA PER BIN RANGE
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