High Performance Heterojunction Dual-Gate FET

• +18.0dBm TYPICAL OUTPUT POWER
• 19.5dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 300 MICRON RECESSED “MUSHROOM”
   DUAL GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING
   PROFILE PROVIDES EXTRA HIGH PERFORMANCE
   AND HIGH RELIABILITY
• MIXER, SWITCH, AGC AND TEMPERATURE
   COMPENSATION APPLICATIONS
• Idss SORTED IN 5mA PER BIN RANGE