Description
The EL814 series of devices each consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a phototransistor detector. 
They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.

FEATUREs:
• AC input response
• Current transfer ratio
(CTR: Min. 20% at IF=±1mA ,VCE=5V)
• High isolation voltage between input 
 and output   (Viso=5000 V rms )
• Wide Operating temperature range -55~110ºC
• High collector-emitter voltage VCEO=80V
• Compact dual-in-line package