EIA1213-2P データシート - Excelics Semiconductor, Inc.
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EIA1213-2P
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Excelics Semiconductor, Inc.
12.75-13.25GHz, 2W Internally Matched Power FET
• 12.75-13.25GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM
• EIA FEATURES HIGH PAE( 30% TYPICAL)
• EIB FEATURES HIGH IP3(46dBm TYPICAL)
• +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB
• 9.5/8.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB
• NON-HERMETIC METAL FLANGE PACKAGE
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