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DTC115EET1G(2013) データシート - ON Semiconductor

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DTC115EET1G

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  2012   lastest PDF  

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NPN Transistors with Monolithic Bias Resistor Network

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.


FEATUREs
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• NSV Prefix for Automotive and Other Applications Requiring
    Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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Digital Transistors (BRT) R1 = 100 kΩ, R2 = 100 kΩ ( Rev : 2012 )
ON Semiconductor
Digital Transistors (BRT) R1 = 100 kΩ, R2 = 100 kΩ
ON Semiconductor
Digital Transistors (BRT) R1 = 100 kΩ, R2 = kΩ
ON Semiconductor
Digital Transistors (BRT) R1 = 100 kΩ, R2 = kΩ ( Rev : 2012 )
ON Semiconductor
AppleTalk© Transceiver
Linear Technology
Digital Transistors (BRT) R1 = 4.7 kΩ, R2 = ∞ kΩ ( Rev : 2012 )
ON Semiconductor
Digital Transistors (BRT) R1 = 10 kΩ, R2 = ∞ kΩ ( Rev : 2012 )
ON Semiconductor
Digital Transistors (BRT) R1 = 10 kΩ, R2 = ∞ kΩ
ON Semiconductor
Digital Transistors (BRT) R1 = 4.7 kΩ, R2 = ∞ kΩ
ON Semiconductor
Digital Transistors (BRT) R1 = 4.7 kΩ, R2 = ∞ kΩ
ON Semiconductor

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