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DS_K6F3216T6M データシート - Samsung

DS_K6F3216T6M image

部品番号
DS_K6F3216T6M

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9 Pages

File Size
135.9 kB

メーカー
Samsung
Samsung Samsung

GENERAL DESCRIPTION
The K6F3216T6M families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.


FEATURES
• Process Technology: Full CMOS
• Organization: 2M x16
• Power Supply Voltage: 2.7~3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 55-TBGA-7.50x12.00

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部品番号
コンポーネント説明
PDF
メーカー
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
Unspecified
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX

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