Features
• DIOFET Utilizes a Unique Patented Process to Monolithically
   Integrate a MOSFET and a Schottky in a Single Die to Deliver:
   • Low RDS(ON) - Minimizes Conduction Losses
   • Low VSD - Reducing the Losses Due to Body Diode
      Conduction
   • Low Qrr - Lower Qrr of the Integrated Schottky Reduces
      Body Diode Switching Losses
   • Low Gate Capacitance (Qg/Qgs) Ratio – Reduces Risk of
      Shoot-Through or Cross Conduction Currents at High
      Frequencies
   • Avalanche Rugged – IAR and EAR Rated
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability