The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.

♦ Common Source Push-Pull Pair
♦ N-Channel Enhancement Mode
♦ Low Qg and Rg
♦ High dv/dt
♦ Nanosecond Switching

FEATUREs
• Isolated Substrate
    − high isolation voltage (>2500V)
    − excellent thermal transfer
    − Increased temperature and power cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
    − easier to drive
    − faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other hazardous materials

Advantages
• High Performance Push-Pull RF Package
• Optimized for RF and high speed switching at frequencies to >100MHz
• Easy to mount—no insulators needed
• High power density