DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 400V(Min)
• Low Collector-Emitter Saturation Voltage-
   : VCE(sat)= 1.5V(Max) @IC= 3A
• High DC Current Gain
   : hFE= 500(Min) @ IC= 2A, VCE= 2V
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

APPLICATIONS
• Power amplification applications.