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D1117 データシート - Inchange Semiconductor

2SD1117 image

部品番号
D1117

コンポーネント説明

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2 Pages

File Size
80.8 kB

メーカー
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min)
• Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 5A
• Wide Area of Safe Operation
• Complement to Type 2SB850


APPLICATIONS
• Designed for audio amplifier, series regulators and general purpose power amplifiers.

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部品番号
コンポーネント説明
PDF
メーカー
Silicon NPN Power Transistor
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