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CY7C1482V33(2011) データシート - Cypress Semiconductor

CY7C1480V33 image

部品番号
CY7C1482V33

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Functional Description[1]
The CY7C1480V33/CY7C1482V33/CY7C1486V33 SRAM integrates 2 M × 36/4 M × 18/1 M × 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK).


FEATUREs
■ Supports bus operation up to 250 MHz
■ Available speed grades are 250, 200, and 167 MHz
■ Registered inputs and outputs for pipelined operation
■ 3.3V core power supply
■ 2.5V/3.3V I/O operation
■ Fast clock-to-output times
   ❐ 3.0 ns (for 250 MHz device)
■ Provide high performance 3-1-1-1 access rate
■ User selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences
■ Separate processor and controller address strobes
■ Synchronous self timed writes
■ Asynchronous output enable
■ Single cycle chip deselect
■ CY7C1480V33, CY7C1482V33 available in JEDEC-standard
   Pb-free 100-pin TQFP, Pb-free and non-Pb-free 165-ball FBGA
   package. CY7C1486V33 available in Pb-free and non-Pb-free
   209-ball FBGA package
■ IEEE 1149.1 JTAG-Compatible Boundary Scan
■ “ZZ” Sleep Mode option

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72-Mbit (2 M × 36/4 M × 18/1 M × 72) Pipelined Sync SRAM
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72-Mbit (2 M × 36/4 M × 18/1 M × 72) Pipelined Sync SRAM ( Rev : 2011 )
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36-Mbit (1 M × 36/2 M × 18/512 K × 72) Flow-Through SRAM ( Rev : 2011 )
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36-Mbit (1 M × 36/2 M × 18) Pipelined SRAM with NoBL™ Architecture ( Rev : 2011 )
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36-Mbit (1 M × 36/2 M × 18/512 K × 72) Flow-Through SRAM with NoBL™ Architecture ( Rev : 2011 )
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36-Mbit (1 M × 36/2 M × 18) Flow-Through SRAM with NoBL™ Architecture ( Rev : 2012 )
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72-Mbit (2 M × 36) Flow-Through SRAM with NoBL™ Architecture ( Rev : 2012 )
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72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
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72-Mbit (2 M × 36) Flow-Through SRAM with NoBL™ Architecture ( Rev : 2013 )
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