Functional Description
The CY7C1316AV18/CY7C1318AV18/CY7C1320AV18 are 1.8V Synchronous Pipelined SRAM equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter.

FEATUREs
• 18-Mb density (2M x 8, 1M x 18, 512K x 36)
• 250-MHz clock for high bandwidth
• 2-Word burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces (data transferred at 500 MHz) @ 250 MHz
• Two input clocks (K and K) for precise DDR timing
    — SRAM uses rising edges only
• Two output clocks (C and C) account for clock skew and flight time mismatching
• Echo clocks (CQ and CQ) simplify data capture in high-speed systems
• Synchronous internally self-timed writes
• 1.8V core power supply with HSTL inputs and outputs
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V–VDD)
• 13 x 15 x 1.4 mm 1.0-mm pitch fBGA package, 165 ball (11x15 matrix)
• JTAG 1149.1 compatible test access port
• Delay Lock Loop (DLL) for accurate data placement