Functional Description
The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling.

FEATUREs
■ Very high speed: 45 ns
■ Temperature ranges:
   ❐ Industrial: –40 °C to +85 °C
■ Wide voltage range: 2.2 V to 3.6 V
■ Pin compatible with CY62128DV30
■ Ultra low standby power
   ❐ Typical standby current: 1 µA
   ❐ Maximum standby current: 4 µA
■ Ultra low active power
   ❐ Typical active current: 1.3 mA at f = 1 MHz
■ Easy memory expansion with CE1, CE2, and OE features
■ Automatic power-down when deselected
■ Complementary metal oxide semiconductor (CMOS) for
   optimum speed and power
■ Offered in Pb-free 32-pin SOIC, 32-pin thin small outline
   package (TSOP) Type I, and 32-pin shrunk thin small outline
   package (STSOP) packages