DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage.

FEATURES:
• High Collector Breakdown Voltage: 250V
• Low Leakage Current: 50nA MAX
• Low Saturation Voltage: 100mV MAX @ 50mA
• Complementary Device: CXT5401E
• SOT-89 Surface Mount Package

APPLICATIONS:
• General purpose switching and amplification
• Telephone applications