NPN Epitaxial Planar Silicon Transistor
FEATUREs
• Small-sized package with two NPN transistors (30C02CH equivalency) contained in one package
• VCEO=30V, IC=0.7A
• Low Collector-to-Emitter Saturation Voltage VCE(sat)=85mV(typ.)@IC=0.2A
• High-speed switching tf=40ns(typ.)@IC=0.3A