Features
• Composite type with a N-channel sillicon MOSFET and a 
   schottky barrier diode contained in one package
   facilitating high-density mounting.
• [MOSFET]
   • Ultrahigh-speed switching
   • 1.8V drive
• [SBD]
   • Short reverse recovery time.
   • Low forward voltage.
• Halogen free compliance.