MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
FEATUREs
• Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting.
[MOSFET]
• 1.8V drive.
[SBD]
• Short reverse recovery time.
• Low forward voltage.
• Junction temperature 150°C guarantee.
APPLICATIONs
• DC / DC converters.