MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode

FEATUREs
• Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3), facilitating high-density mounting.
• [MOS]
   • Low ON-resistance
   • Ultrahigh-speed switching
   • 4V drive
• [SBD]
   • Short reverse recovery time
   • Low forward voltage