MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
FEATUREs
• Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3), facilitating high-density mounting.
• [MOS]
• Low ON-resistance
• Ultrahigh-speed switching
• 4V drive
• [SBD]
• Short reverse recovery time
• Low forward voltage