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CPD65 データシート - Central Semiconductor

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部品番号
CPD65

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2 Pages

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Central-Semiconductor
Central Semiconductor Central-Semiconductor

PROCESS DETAILS
   Process EPITAXIAL PLANAR
   Die Size 9.5 X 9.5 MILS
   Die Thickness 7.5 MILS
   Anode Bonding Pad Area 2.5 MILS DIAMETER
   Top Side Metalization Al - 30,000Å
   Back Side Metalization Au - 13,000Å


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