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CP283 データシート - Central Semiconductor

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CP283

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Central-Semiconductor
Central Semiconductor Central-Semiconductor

PROCESS DETAILS

   Die Size 68 x 68 MILS
   Die Thickness 9.5 MILS
   Base Bonding Pad Area 18 x 11 MILS
   Emitter Bonding Pad Area 18 x 12 MILS
   Top Side Metalization Al - 45,000Å
   Back Side Metalization Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å)


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