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CM1200E4C-34N データシート - Mitsumi

CM1200E4C-34N image

部品番号
CM1200E4C-34N

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Mitsumi
Mitsumi Mitsumi

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

● IC................................................................ 1200A
● VCES ....................................................... 1700V
● Insulated Type
● 1-element in a Pack (for brake)
● AISiC Baseplate
● Trench Gate IGBT : CSTBT™
● Soft Reverse Recovery Diode


APPLICATION
  Traction drives, DC choppers, Dynamic braking choppers

 

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部品番号
コンポーネント説明
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メーカー
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI ELECTRIC
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI ELECTRIC
HIGH POWER SWITCHING USE INSULATED TYPE
Mitsumi
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI ELECTRIC
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI ELECTRIC
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI ELECTRIC
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI ELECTRIC
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI ELECTRIC
HIGH POWER SWITCHING USE INSULATED TYPE
Mitsumi
HIGH POWER SWITCHING USE INSULATED TYPE ( Rev : 1998 )
MITSUBISHI ELECTRIC

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