CEM6659 データシート - Chino-Excel Technology
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CEM6659
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Chino-Excel Technology
FEATURES
■ 60V, 4.1A, RDS(ON) = 68mΩ @VGS = 10V.
RDS(ON) = 86mΩ @VGS = 4.5V.
■ -60V, -3.1A, RDS(ON) = 130mΩ @VGS = -10V.
RDS(ON) = 170mΩ @VGS = -4.5V.
■ Super high dense cell design for extremely low RDS(ON).
■ High power and current handing capability.
■ Surface mount Package.
■ Lead free product is acquired.
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Dual Enhancement Mode Field Effect Transistor (N and P Channel)
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Dual Enhancement Mode Field Effect Transistor (N and P Channel)
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Dual Enhancement Mode Field Effect Transistor (N and P Channel) ( Rev : 2006 )
Chino-Excel Technology
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Samhop Mircroelectronics
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Samhop Mircroelectronics
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