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CA3018 データシート - Harris Semiconductor

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部品番号
CA3018

コンポーネント説明

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Harris
Harris Semiconductor Harris

The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate.
Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility.


FEATUREs
• Matched Monolithic General Purpose Transistors
• hFE Matched . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10%
• VBE Matched
    - CA3018A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±2mV
    - CA3018 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV
• Operation From DC to 120MHz
• Wide Operating Current Range
• CA3018A Performance Characteristics Controlled from 10µA to 10mA
• Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz
• Full Military Temperature Range . . . . . . . -55°C to 125°C


APPLICATIONs
• Two Isolated Transistors and a Darlington Connected Transistor Pair for Low Power Applications at Frequencies from DC through the VHF Range
• Custom Designed Differential Amplifiers
• Temperature Compensated Amplifiers
• See Application Note, AN5296 “Application of the CA3018 Integrated Circuit Transistor Array” for Suggested Applications

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コンポーネント説明
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メーカー
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