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C5761 データシート - NEC => Renesas Technology

C5761 image

部品番号
C5761

コンポーネント説明

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14 Pages

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77.4 kB

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NEC
NEC => Renesas Technology NEC

NPN SiGe RF TRANSISTOR FOR
LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)


FEATURES
• Ideal for low noise ⋅ high-gain amplification
   NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
• Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
• SiGe technology (fT = 60 GHz, fmax = 60 GHz)
• Flat-lead 4-pin thin-type super minimold (M04) package


部品番号
コンポーネント説明
PDF
メーカー
NPN Silicon Germanium RF Transistor ( Rev : 2004 )
Infineon Technologies
NPN Silicon Germanium RF Transistor
Infineon Technologies
NPN Silicon Germanium RF Transistor
Infineon Technologies
NPN SILICON GERMANIUM RF TRANSISTOR
NEC => Renesas Technology
NPN Silicon Germanium RF Transistor* ( Rev : 2004 )
Infineon Technologies
NPN Silicon Germanium RF Transistor* ( Rev : 2007 )
Infineon Technologies
NPN Silicon Germanium RF Transistor*
Infineon Technologies
NPN Silicon Germanium RF Transistor ( Rev : 2008 )
Infineon Technologies
NPN Silicon Germanium RF Transistor
Infineon Technologies
NPN SILICON GERMANIUM RF TRANSISTOR
Renesas Electronics

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