datasheetbank_Logo
データシート検索エンジンとフリーデータシート
HOME  >>>  NEC => Renesas Technology  >>> C3355 PDF

C3355 データシート - NEC => Renesas Technology

2SC3355 image

部品番号
C3355

Other PDF
  no available.

PDF
DOWNLOAD     

page
8 Pages

File Size
83.4 kB

メーカー
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.


FEATURES
• Low Noise and High Gain
   NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
   NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
• High Power Gain
   MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz


部品番号
コンポーネント説明
PDF
メーカー
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Inchange Semiconductor
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
Renesas Electronics

Share Link: GO URL

EnglishEnglish Korean한국어 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]