C2335 データシート - NEC => Renesas Technology
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C2335
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NEC => Renesas Technology
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.
FEATURES
• Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A
• Fast switching speed: tf = 1.0 µs MAX. @IC = 3.0 A
• Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A
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NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
Renesas Electronics
NPN SILICON TRIPLE DIFFUSED TRANSISTOR HIGH SPEED HIGH VOLTAGE SWITCHING
Renesas Electronics
NPN TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING
New Jersey Semiconductor
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