BUV21G データシート - ON Semiconductor
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BUV21G
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ON Semiconductor
SWITCHMODE™ Series NPN Silicon Power Transistor
This device is designed for high speed, high current, high power applications.
FEATUREs
• High DC Current Gain:
hFE min = 20 at IC = 12 A
• Low VCE(sat), VCE(sat)
max = 0.6 V at IC = 8 A
• Very Fast Switching Times:
TF max = 0.4 μs at IC = 25 A
• These are Pb−Free Devices*
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16 AMPERES SILICON POWER TRANSISTORS 200 - 250 VOLTS, 250 WATTS
New Jersey Semiconductor
16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS ( Rev : 2010 )
ON Semiconductor
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